COUNTERACTING THRESHOLD-VOLTAGE DRIFT IN ION-SELECTIVE FIELD EFFECT TRANSISTORS (ISFETS) USING THRESHOLD-SETTING ION IMPLANTATION

Ion-selective field effect transistors (ISFETs) exhibit instability, commonly known as drift, in the form of metal-anal a slow, monotonic, temporal increase in the threshold voltage of the device.A method for counteracting instability inspired by a physical model for threshold voltage drift in pH-sensitive ISFETs is presented.This method involves a

A primary concern in a multitude of industrial processes is the precise monitoring of gaseous substances to ensure proper operating conditions.However, many traditional technologies are not suitable for operation under harsh environmental conditions.Radar-based time-of-flight permittivity measurements have been Wallets proposed as alternative but s